A compact quantum surface potential model for a MOSFET device
نویسندگان
چکیده
منابع مشابه
Surface-Potential-Based Compact Model for Quantum Effects in Planar and Double-Gate MOSFET
The surface-potential-based compact model for quantum effects in planar and doublegate MOSFETs is developed. The surface-potentials at source and drain sides are calculated with the effective field approximation and the quantum charge epxression. The drain current is calculated with the drift-diffusion model and quantum correction of the lateral field. One set of equations is used for both plan...
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ژورنال
عنوان ژورنال: Mathematical and Computer Modelling
سال: 2010
ISSN: 0895-7177
DOI: 10.1016/j.mcm.2009.08.023